Mr. Naoto Utsuyama Wins Good Speaker Awards in the Presentation of Graduation Theses

Mr. Naoto Utsuyama won good speaker awards in the presentation of graduation theses of the department of electrical and electronic engineering held on Feb.20-21th, 2014. The title of graduation thesis is “Formation of tensile-strained Si/relaxed SiGe/Si(110) structures and characterization of the hole mobility in the strained Si layer”. He investigated electrical properties of this heterostructure with an aim to realize high-hole-mobility MOSFET devices. He said, “It’s a great honor for me to be given this award. I’m willing to devote myself to studying for further accomplishments in future”.