Research on Novel Functional Devices Based on Group IV Semiconductor Superstructures

ARIMOTO, Keisuke Associate Professor	HARA, Kosuke O. Associate Professor
Information | Lab. HP	Information | Lab. HP

Novel properties such as high electron mobility are expected of strain-engineered group IV semiconductor heterostructures formed with atomic-level control. We are involved in growth technology and development of novel functions of group IV semiconductor heterostructures.

Research subjects

1. Studies on Formation of Group IV Semiconductor Superstructures

Development of novel technology for the formations of atomically controlled superlattice structures and heterostructures are focused.

2. Studies on Strain Engineering in Semiconductors

Properties of semiconductor heterostructures can be artificially-tuned by controlling strain which arises from difference in lattice constants of the constituent materials. Therefore, studies are going on with an aim to establish strain engineering technology which forms the bases for development of novel functional material systems.

3. Studies on Fundamental Properties of Group IV Semiconductor Alloys

Semiconductor alloys which are mixtures of constituents are used as favorable modifiers of semiconductor heterostructure devices. Investigations are going on in order to clarify fundamental properties of group IV semiconductor alloys.